Dry etching apparatus
US4298419A · kind A · utility
30Cited by
2References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 26, 1980 |
| Grant date | Nov 3, 1981 |
| Priority date | — |
| Expiry date | Jun 26, 2000 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C15/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A dry etching apparatus using microwaves according to the present invention is equipped with means for impressing such an AC voltage upon a sample as has a frequency ranging from 100 KHx to 10 MHx. Consequently, the sample has its surface prevented from being charged up no matter which it might be made of an insulator or might have its surface covered with an insulator. As a result, the etching rate can be maintained at a high level even for such sample.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.