Method for forming a nitride insulating film on a silicon semiconductor substrate surface by direct nitridation
US4298629A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 1980 |
| Grant date | Nov 3, 1981 |
| Priority date | — |
| Expiry date | Mar 7, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02252
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for forming an insulating film on a semiconductor substrate surface, the silicon nitride of the insulating film has been formed by a plasma CVD or a direct nitridation. In the present invention, a gas plasma of a nitrogen-containing gas is generated in a direct nitridation reaction chamber, and the semiconductor silicon body is heated to a temperature of from approximately 800 to approximately 1300.degree. C. within the gas plasma atmosphere, thereby forming the silicon nitride film. The resulting silicon nitride film has a dense structure and a low oxygen concentration and a thick silicon nitride film is formed in a short period by direct nitridation of silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.