Memory
US4298962A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 1980 |
| Grant date | Nov 3, 1981 |
| Priority date | — |
| Expiry date | Jan 25, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A high-density of semiconductor device is disclosed, which comprises a semiconductor substrate of a first conductivity type, first and second semiconductor regions of a second conductivity provided in the semiconductor substrate, the first and second semiconductor regions defining a channel region therebetween at the surface of the substrate, an insulator film disposed on the channel region, a conductive layer formed on the insulator film, means for producing depletion layers from the first and second semiconductor regions in such a manner that the depletion layers contact with each other to isolate the channel region from the substrate, means for selectively feeding majority carriers of the substrate to the channel region at a density higher than that of the substrate, and a means for detecting the existence of the accumulation of the majority carriers in the channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.