Photolithographic projection apparatus using light in the far ultraviolet
US4302079A · kind A · utility
18Cited by
4References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 10, 1980 |
| Grant date | Nov 24, 1981 |
| Priority date | — |
| Expiry date | Apr 10, 2000 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70966
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A lens design for submicron photolithography images a mask (21) onto a semiconductor wafer (23) using light in the far ultraviolet. Illustratively, the lens design is a modified Dyson imaging system comprising a thick plano-convex lens (31), a beam splitter, adjacent to the planar surface of the plano-convex lens comprising two right angle prisms (34, 35) separated by a dielectric interface (36), and an aspherical mirror (32) located on the convex side of the lens. Stress-induced birefringence is used to rotate the plane of polarization of the object radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.