Plasma develoment of resists
US4307178A · kind A · utility
22Cited by
6References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 30, 1980 |
| Grant date | Dec 22, 1981 |
| Priority date | — |
| Expiry date | Apr 30, 2000 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Exposed patterns in phenol-formaldehyde Novolak resin/diazo ketone resist layers are developed in an oxygen plasma by treating the resist layers, prior to development, with a magnesium salt. This produces a negative pattern. Positive patterns are produced by combining the process with decarboxylation of the exposed areas followed by blanket exposure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.