Magnetron sputtering apparatus
US4309266A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 18, 1980 |
| Grant date | Jan 5, 1982 |
| Priority date | — |
| Expiry date | Jul 18, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3408
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetron sputtering apparatus for producing thin films, which comprises at least two spaced apart opposing electrodes, one of the electrodes having a space therein and being used for mounting a target thereon, from which film-forming atoms are ejected by ion-bombardment, the other electrode being used for mounting a substrate thereon, and a magnet arranged in the space of the target mounting electrode, characterized in that the magnet is mounted on a means for adjusting the distance between the target and the magnet, the means for adjusting said distance being provided in the one electrode on which the target is mounted. The magnetron sputtering apparatus of the present invention enables one to adjust the magnetic flux density at the surface of the target by the adjustment of the distance between the target and the magnet, thus making it possible to produce thin films with uniform characteristics, even if the sputtering is repeated many times without exchange of the target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.