Method for the deposition of pure semiconductor material

US4311545A · kind A · utility

Assignee

• Wacker-Chemitronic Gesellschaft fur Elektronik Grundstoffe mbH · DE

Inventors

• Erwin Bugl · Graz, AT
• Rudolf Griesshammer · Altötting, DE
• Helmut Lorenz · Burghausen, DE
• Helmut Hamster · Burghausen, DE
• Franz Koppl · Altötting, DE

Key dates

• Filing date: Mar 3, 1980
• Grant date: Jan 19, 1982
• Expiry date: Mar 3, 2000

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/455
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The invention relates to a method and device for making pure semiconductor aterial by thermal decomposition of compounds of the semiconductor material on suitable carrier elements. The quantity and quality of the obtained semiconductor material is increased in accordance with the invention by introducing the compounds to be decomposed into the reactor chamber in at least a partially liquid state through a nozzle having a plurality of discharge openings.