Light emitting semiconductor devices
US4313125A · kind A · utility
13Cited by
1References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 21, 1979 |
| Grant date | Jan 26, 1982 |
| Priority date | — |
| Expiry date | Jun 21, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32308
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A double heterostructure light emitting semiconductor device is described wherein a narrow bandgap active region is sandwiched between two wider bandgap cladding layers, one of which contains a p-n homojunction. The purpose is to separate the p-n junction from the active region and, thus, to have the active region bounded by two isotype (p-p or n-n) heterojunctions. This configuration significantly reduces nonradiative interface recombination current which occurs principally at the anisotype (p-n) heterojunction in a standard double heterostructure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.