Semiconductor resistor comprising a resistor layer along a side surface

US4314269A · kind A · utility

Assignee

• VLSI Technology Research Association · JP

Inventor

• Kunimitsu Fujiki · Kawasaki, JP

Key dates

• Filing date: Jun 6, 1979
• Grant date: Feb 2, 1982
• Expiry date: Jun 6, 1999

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/43

Abstract

A semiconductor resistor comprises a semiconductor resistor layer along at least an area of an internal side surface of a groove formed in a predetermined configuration, such as a figure of .pi., in a semiconductor block of a conductivity type opposite to that of the resistor layer. Semiconductor contact layers are formed preferably simultaneously with the resistor layer in electrical contact therewith on a principal surface of the block, with which surface the internal side surface may or may not form the right angle. The block may or may not be supported by a substrate, such as a sapphire, a spinel, or a like insulator single crystal. The groove may have a bottom in the block or the substrate. When the bottom is either in the block or on a semiconductor bulk serving as the substrate, a P-N junction should be formed along the extension of the bottom. A highly doped region may be previously formed near the bottom when the resistor layer is formed by diffusing an impurity onto the internal side surface and to the bottom.