Method of forming nondefective zone in silicon single crystal wafer by two stage-heat treatment
US4314595A · kind A · utility
112Cited by
6References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 8, 1980 |
| Grant date | Feb 9, 1982 |
| Priority date | — |
| Expiry date | Jan 8, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon single crystal wafer is subjected to two-stage heat treatment. In the first-stage it is heated at a temperature within the range of between 500.degree. C. and 1,000.degree. C. Subsequently the thus heated wafer is heated at a temperature higher than that at the first stage. Thus, a nondefective zone is formed in the surface region of the wafer, and the interior zone of the wafer becomes rich in micro defects capable of gettering impurities such as heavy metals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.