Device fabrication by plasma etching
US4314875A · kind A · utility
32Cited by
2References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 13, 1980 |
| Grant date | Feb 9, 1982 |
| Priority date | — |
| Expiry date | May 13, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/963
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Etch rate in plasma-assisted etching is increased by inclusion of an additional oxidant. The oxidant increases consumption of unsaturates in the plasma to increase etchant species lifetime and to suppress polymer formation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.