Two color narrow bandwidth detector
US4316206A · kind A · utility
4Cited by
6References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 14, 1980 |
| Grant date | Feb 16, 1982 |
| Priority date | — |
| Expiry date | Apr 14, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A narrow two color semiconductor detector created from the built in field tween epitaxial layers due to interface traps. Opposite polarity on opposite sides of the interface result in a net photocurrent created on each side which flows in opposing directions. The substrate supporting the epitaxial layers provides a cutoff filter range for light entering through the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.