Integrated-circuit structure including lateral PNP transistor with polysilicon layer bridging gap in collector field relief electrode
US4319262A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 1980 |
| Grant date | Mar 9, 1982 |
| Priority date | — |
| Expiry date | Feb 12, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A lateral PNP transistor with concentric p-doped emitter and collector diffusion zones in an n-doped base layer epitaxially grown on a p-type silicon substrate, covered by a layer of silicon oxide, has emitter and collector electrodes in the form of metallic patches on the oxide layer overlying the respective diffusion zones and penetrating the oxide at limited contact areas. The metallic patches extend above an annular base-layer portion separating the two diffusion zones and symmetrically approach a circular centerline of this annular portion in order to guard against punch-through upon accidental polarity reversal of the collector/emitter voltage. A narrow peripheral gap in the collector electrode is traversed by an elongate metal strip which forms a radial extension of the emitter electrode leading to a supply terminal, the spacing of that strip from the gap edges substantially equaling the radial distance between the confronting peripheral boundaries of the two patches. If the diffusion zone of the collector is peripherally continuous instead of being interrupted in the region of the gap of the overlying electrode, the gap is bridged by a stratum of p-doped polycrystalline sil…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.