Franco Bertotti
21Patents
9h-index
20Co-inventors
71Inventor score
Filing activity: Jun 8, 1979 → Apr 1, 1998
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4887142A | Monolithically integrated semiconductor device containing bipolar junction transistors, CMOS and DMOS transistors and low leakage diodes and a method for its fabrication | Electricity | 87 | Expired |
| US5021860A | Integrated device for shielding the injection of charges into the substrate | Electricity | 26 | Expired |
| US4739378A | Protection of integrated circuits from electric discharge | Electricity | 17 | Expired |
| US4890149A | Integrated device for shielding charge injection into the substrate, in particular in driving circuits for inductive and capacitive loads | Emerging Cross-Sectional Technologies | 15 | Expired |
| US4631561A | Semiconductor overvoltage suppressor with accurately determined striking potential | Electricity | 15 | Expired |
| US4266233A | I-C Wafer incorporating junction-type field-effect transistor | Electricity | 13 | Expired |
| US4829344A | Electronic semiconductor device for protecting integrated circuits against electrostatic discharges | Electricity | 12 | Expired |
| US4682197A | Power transistor with spaced subtransistors having individual collectors | Electricity | 9 | Expired |
| US4725810A | Method of making an implanted resistor, and resistor obtained thereby | Emerging Cross-Sectional Technologies | 9 | Expired |
| US4641171A | Monolithically integrated semiconductor power device | Electricity | 8 | Expired |
| US4245209A | Voltage divider including a tapped resistor diffused in semiconductor substrate | Electricity | 8 | Expired |
| US5185649A | Circuital arrangement for preventing latchup in transistors with insulated collectors | Electricity | 6 | Expired |
| US4740821A | NPN equivalent structure with breakdown voltage greater than the intrinsic breakdown voltage of NPN transistors | Electricity | 6 | Expired |
| US4672235A | Bipolar power transistor | Electricity | 6 | Expired |
| US4887141A | Saturation limiting system for a vertical, isolated collector PNP transistor and monolithically integrated structure thereof | Emerging Cross-Sectional Technologies | 6 | Expired |
| US4614962A | Controlled electronic switching device for the suppression of transients | Electricity | 5 | Expired |
| US4319262A | Integrated-circuit structure including lateral PNP transistor with polysilicon layer bridging gap in collector field relief electrode | Electricity | 5 | Expired |
| US4663647A | Buried-resistance semiconductor device and fabrication process | Electricity | 3 | Expired |
| US4910159A | Method for incrementally increasing the collector area of a lateral PNP transistor during electrical testing of an integrated device on wafer | Electricity | 2 | Expired |
| USRE35486E | Circuital arrangement for preventing latchup in transistors with insulated collectors | General | 2 | Expired |
| US6236225A | Method of testing the gate oxide in integrated DMOS power transistors and integrated device comprising a DMOS power transistor | Physics | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.