High resolution lithography system for microelectronic fabrication
US4321317A · kind A · utility
13Cited by
7References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 28, 1980 |
| Grant date | Mar 23, 1982 |
| Priority date | — |
| Expiry date | Apr 28, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/143
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Master and working photomasks are made using a photoresist darkened on and bonded to respective quartz substrates. The working photomask is formed by deep ultraviolet light exposure through an electron beam patterned master mask. Deep ultraviolet light is also used to pattern a resist on a silicon slice through the working mask. The same resist is preferably used on the slice and both masks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.