Fabrication process for semiconductor bodies
US4322379A · kind A · utility
8Cited by
3References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 2, 1979 |
| Grant date | Mar 30, 1982 |
| Priority date | — |
| Expiry date | Apr 2, 1999 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/60
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A system and method is provided for forming semiconductor tear-drop shaped bodies having minimal grain boundaries. Semiconductor material is melted in a capillary tube at the top of a tower, and forced under gas pressure through a nozzle. Separate semiconductor bodies are formed. They are passed through a free fall path over which a predetermined temperature gradient controls solidification of the bodies. The resultant bodies are tear-drop semiconductor bodies of near uniform size with minimal grain boundaries.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.