Infrared charge injection device imaging system
US4327291A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 1980 |
| Grant date | Apr 27, 1982 |
| Priority date | — |
| Expiry date | Jun 16, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N23/20
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An infrared charge transfer device (CTD) imager system is disclosed which includes an optic system, a charge transfer device detector matrix and a signal processor. The optic system focuses infrared energy from a scene onto the detector matrix. The detector matrix produces electrical signals representative of the impinging energy and the signal processor processes the electrical signals into video signals. The CTD detector matrix comprises a plurality of charge injection devices (CID). Each CID has an IR sensitive area, and two metal/insulator/semiconductor gate electrodes surrounded by a field plate. One, a column gate electrode, is centrally located within the IR sensitive area and the other, a row gate electrode, surrounds the column gate electrode. In one embodiment, the field plate and column gate electrode are in a spaced but overlapping relationship with minimum overlap, and the row gate electrode is in a spaced relationship to the field plate and column gate electrode whereby the electric field generated between the edges (corners in particular) of the field plate and column and row gate electrodes is substantially reduced. The column electrode is formed as an integral part…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.