Process for plasma etching
US4330384A · kind A · utility
38Cited by
3References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 29, 1979 |
| Grant date | May 18, 1982 |
| Priority date | — |
| Expiry date | Oct 29, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Micro-wave plasma etching is carried out with a gas containing at least SF.sub.6 as an etching gas at a high etching rate of silicon, and a high selectivity, with an easy monitoring and a low temperature dependency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.