Etching process with vibrationally excited SF.sub.6
US4331504A · kind A · utility
15Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 25, 1981 |
| Grant date | May 25, 1982 |
| Priority date | — |
| Expiry date | Jun 25, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate which forms a volatile fluoride is etched and directionality is achieved using vibrationally excited SF.sub.6 which has been exposed to laser irradiation. The substrate is etched through a mask having openings smaller than the diffraction limit of the laser light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.