Use of silicide to bridge unwanted polycrystalline silicon P-N junction
US4333099A · kind A · utility
40Cited by
7References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 4, 1980 |
| Grant date | Jun 1, 1982 |
| Priority date | — |
| Expiry date | Feb 4, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/903
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Polysilicon lines are utilized for interconnecting the various elements of CMOS devices. The polysilicon lines are doped with whatever dopant conveniently suits the processing step, to form an undesired PN junction. The junction is electrically short-circuited, preferably by a polysilicided section extending across the junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.