Inventor · Mesa, AZ, US

Charles E. Weitzel

46Patents
18h-index
39Co-inventors
81Inventor score

Filing activity: Oct 29, 1976 → Apr 5, 2005

Most-cited inventions

PatentTitleAreaCited byStatus
US6893947B2 Advanced RF enhancement-mode FETs with improved gate properties Electricity 123 Expired
US6867078B1 Method for forming a microwave field effect transistor with high operating voltage Electricity 100 Expired
US5956578A Method of fabricating vertical FET with Schottky diode Electricity 64 Expired
US5917203A Lateral gate vertical drift region transistor Electricity 60 Expired
US5885860A Silicon carbide transistor and method Emerging Cross-Sectional Technologies 57 Expired
US4199773A Insulated gate field effect silicon-on-sapphire transistor and method of making same Electricity 54 Expired
US5661312A Silicon carbide MOSFET Electricity 41 Expired
US5710455A Lateral MOSFET with modified field plates and damage areas Electricity 41 Expired
US4333099A Use of silicide to bridge unwanted polycrystalline silicon P-N junction Emerging Cross-Sectional Technologies 40 Expired
US5569937A High breakdown voltage silicon carbide transistor Electricity 37 Expired
US5399515A Method of fabricating a silicon carbide vertical MOSFET and device Emerging Cross-Sectional Technologies 35 Expired
US6100549A High breakdown voltage resurf HFET Electricity 34 Expired
US5399887A Modulation doped field effect transistor Electricity 25 Expired
US4131496A Method of making silicon on sapphire field effect transistors with specifically aligned gates Emerging Cross-Sectional Technologies 24 Expired
US5612232A Method of fabricating semiconductor devices and the devices Electricity 23 Expired
US4160260A Planar semiconductor devices and method of making the same Emerging Cross-Sectional Technologies 20 Expired
US4091527A Method for adjusting the leakage current of silicon-on-sapphire insulated gate field effect transistors Emerging Cross-Sectional Technologies 19 Expired
US5451797A Method of fabricating a silicon carbide vertical MOSFET and device Emerging Cross-Sectional Technologies 19 Expired
US4969032A Monolithic microwave integrated circuit having vertically stacked components Emerging Cross-Sectional Technologies 18 Expired
US5677230A Method of making wide bandgap semiconductor devices Emerging Cross-Sectional Technologies 18 Expired
US5397717A Method of fabricating a silicon carbide vertical MOSFET Emerging Cross-Sectional Technologies 17 Expired
US7229903B2 Recessed semiconductor device Electricity 13 Expired
US5895260A Method of fabricating semiconductor devices and the devices Electricity 11 Expired
US5119149A Gate-drain shield reduces gate to drain capacitance Electricity 11 Expired
US4263709A Planar semiconductor devices and method of making the same Electricity 11 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.