Semiconductor laser device with facet passivation film
US4337443A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 1980 |
| Grant date | Jun 29, 1982 |
| Priority date | — |
| Expiry date | Feb 25, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0283
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser element is disclosed which includes a film of an amorphous material deposited on at least an optical output facet of the laser element and contains silicon and hydrogen as the indispensable components. The thickness of the amorphous film is preferably selected in the vicinity of (.lambda./4).multidot.m where .lambda. represents wavelength of laser light in the amorphous film and m represents an odd integer. A film of a transparent insulation material can be deposited over the amorphous film thereby to constitute a composite film. With the disclosed structure of the semiconductor laser element, increasement in a threshold current of the laser element can be suppressed to a minimum, while a maximum optical output power can be increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.