Takashi Kajimura
32Patents
13h-index
37Co-inventors
77Inventor score
Filing activity: Oct 19, 1977 → May 19, 1993
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4961197A | Semiconductor laser device | Electricity | 56 | Expired |
| US4503540A | Phase-locked semiconductor laser device | Electricity | 40 | Expired |
| US4337443A | Semiconductor laser device with facet passivation film | Electricity | 35 | Expired |
| US4176325A | Semiconductor laser device | Electricity | 32 | Expired |
| US4369513A | Semiconductor laser device | Electricity | 30 | Expired |
| US4740976A | Semiconductor laser device | Electricity | 20 | Expired |
| US4881235A | Semiconductor laser having a multiple quantum well structure doped with impurities | Emerging Cross-Sectional Technologies | 18 | Expired |
| US4827483A | Semiconductor laser device and method of fabricating the same | Electricity | 15 | Expired |
| US4432091A | Semiconductor laser device | Electricity | 15 | Expired |
| US4288757A | Semiconductor laser device | Electricity | 13 | Expired |
| US4599729A | Semiconductor laser device having facets provided with dielectric layers | Electricity | 13 | Expired |
| US4794606A | Opto-electronic device | Electricity | 13 | Expired |
| US4752934A | Multi quantum well laser with parallel injection | Electricity | 13 | Expired |
| US4509173A | Phase-locked semiconductor laser device | Electricity | 10 | Expired |
| US4881238A | Semiconductor laser having quantum well active region doped with impurities | Electricity | 10 | Expired |
| US5157679A | Optoelectronic devices | Electricity | 8 | Expired |
| US5300793A | Hetero crystalline structure and semiconductor device using it | Electricity | 8 | Expired |
| US4780879A | Semiconductor laser device having little astigmatism | Electricity | 8 | Expired |
| US4630279A | Buried heterojunction laser | Electricity | 8 | Expired |
| US4841531A | Semiconductor laser device | Electricity | 7 | Expired |
| US4800565A | Semiconductor laser device having high optical intensity and reliability | Electricity | 6 | Expired |
| US5136601A | Semiconductor laser | Electricity | 5 | Expired |
| US4811354A | Semiconductor laser | Electricity | 5 | Expired |
| US4797891A | Semiconductor laser | Electricity | 5 | Expired |
| US4602371A | High output semiconductor laser device utilizing a mesa-stripe optical confinement region | Electricity | 5 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.