Method for producing silicon dioxide/polycrystalline silicon interfaces
US4341818A · kind A · utility
17Cited by
7References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 16, 1980 |
| Grant date | Jul 27, 1982 |
| Priority date | — |
| Expiry date | Jun 16, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The efficient production of sequential layers of silicon dioxide and polycrystalline silicon is possible using a specific set of reaction steps. This set of reaction steps includes the oxidation of silicon at low oxygen pressure and at temperatures of the magnitude of 900 degrees C., followed by the deposition of polycrystalline silicon at substantially the same temperature utilizing a dichloride silane chemical vapor deposition (CVD) process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.