Hyman J. Levinstein
36Patents
21h-index
50Co-inventors
88Inventor score
Filing activity: Sep 3, 1974 → Jan 29, 1998
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5903428A | Hybrid Johnsen-Rahbek electrostatic chuck having highly resistive mesas separating the chuck from a wafer supported thereupon and method of fabricating same | Emerging Cross-Sectional Technologies | 231 | Expired |
| US5745331A | Electrostatic chuck with conformal insulator film | Electricity | 107 | Expired |
| US4378628A | Cobalt silicide metallization for semiconductor integrated circuits | Electricity | 87 | Expired |
| US4427516A | Apparatus and method for plasma-assisted etching of wafers | Emerging Cross-Sectional Technologies | 61 | Expired |
| US4276557A | Integrated semiconductor circuit structure and method for making it | Emerging Cross-Sectional Technologies | 53 | Expired |
| US4256534A | Device fabrication by plasma etching | Chemistry; Metallurgy | 50 | Expired |
| US4208241A | Device fabrication by plasma etching | Electricity | 49 | Expired |
| US5491603A | Method of determining a dechucking voltage which nullifies a residual electrostatic force between an electrostatic chuck and a wafer | Electricity | 45 | Expired |
| US5753132A | Method of making electrostatic chuck with conformal insulator film | Electricity | 42 | Expired |
| US4555842A | Method of fabricating VLSI CMOS devices having complementary threshold voltages | Emerging Cross-Sectional Technologies | 42 | Expired |
| US4151007A | Hydrogen annealing process for stabilizing metal-oxide-semiconductor structures | Emerging Cross-Sectional Technologies | 42 | Expired |
| US4419201A | Apparatus and method for plasma-assisted etching of wafers | Emerging Cross-Sectional Technologies | 41 | Expired |
| US4343677A | Method for patterning films using reactive ion etching thereof | Emerging Cross-Sectional Technologies | 37 | Expired |
| US5360524A | Method for planarization of submicron vias and the manufacture of semiconductor integrated circuits | Electricity | 37 | Expired |
| US5585012A | Self-cleaning polymer-free top electrode for parallel electrode etch operation | Emerging Cross-Sectional Technologies | 33 | Expired |
| US4472237A | Reactive ion etching of tantalum and silicon | Emerging Cross-Sectional Technologies | 29 | Expired |
| US5729423A | Puncture resistant electrostatic chuck | Emerging Cross-Sectional Technologies | 26 | Expired |
| US4332839A | Method for making integrated semiconductor circuit structure with formation of Ti or Ta silicide | Emerging Cross-Sectional Technologies | 26 | Expired |
| US4033287A | Radial flow reactor including glow discharge limiting shield | Chemistry; Metallurgy | 26 | Expired |
| US4011583A | Ohmics contacts of germanium and palladium alloy from group III-V n-type semiconductors | Emerging Cross-Sectional Technologies | 23 | Expired |
| US4134125A | Passivation of metallized semiconductor substrates | Electricity | 22 | Expired |
| US4149905A | Method of limiting stacking faults in oxidized silicon wafers | Emerging Cross-Sectional Technologies | 20 | Expired |
| US5986875A | Puncture resistant electrostatic chuck | Emerging Cross-Sectional Technologies | 20 | Expired |
| US6110821A | Method for forming titanium silicide in situ | Electricity | 17 | Expired |
| US4341818A | Method for producing silicon dioxide/polycrystalline silicon interfaces | Electricity | 17 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.