Method for patterning films using reactive ion etching thereof

US4343677A · kind A · utility

Assignee

• Bell Telephone Laboratories, Inc. · US

Inventors

• Eliezer Kinsbron · Highland Park, US
• Hyman J. Levinstein · Berkeley Heights, US
• William E. Willenbrock, Jr. · Manchester, US

Key dates

• Filing date: Mar 23, 1981
• Grant date: Aug 10, 1982
• Expiry date: Mar 23, 2001

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/963
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In the patterning of an organic layer on a VLSI wafer by means of reactive oxygen (or other) ion anisotropic etching, build-ups of oxides (or other compounds) on the sidewalls of apertures formed in the organic layer are removed prior to etching the material, typically aluminum, of the VLSI wafer located at the bottom of these apertures, using the patterned organic layer as an etch mask.