High selectivity plasma etching method
US4348577A · kind A · utility
17Cited by
5References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 3, 1980 |
| Grant date | Sep 7, 1982 |
| Priority date | — |
| Expiry date | Sep 3, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A parallel-plate type gas plasma etching apparatus for etching a workpiece having a multilayer structure having a high etch rate ratio. A pair of parallel-plate electrodes are disposed in a reactor. A workpiece to be etched is disposed upon one of the electrodes. The reactor is held at a predetermined pressure and an etching gas supplied thereto. Rf power is applied between the electrodes with the positive terminal of the rf generator being coupled to the electrode upon which the workpiece is disposed. The frequency of the rf power is 10 MHz or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.