Method for producing MOS semiconductor device
US4349395A · kind A · utility
6Cited by
14References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 18, 1980 |
| Grant date | Sep 14, 1982 |
| Priority date | — |
| Expiry date | Dec 18, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal layer of a metal-insulator-semiconductor type semiconductor device, e.g., a metal electrode on an oxide layer covering a semiconductor substrate of an MOS diode or an MOS FET, contains at least one cation-trapping element. The semiconductor substrate with the metal layer and the oxide layer is heated at an elevated temperature to diffuse some of the ions responsible for the cation-trapping element out of the metal layer and into the upper part of the oxide layer. The metal and oxide layers promote the surface passivation of the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.