Semiconductor annealing by pulsed heating
US4350537A · kind A · utility
26Cited by
2References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 9, 1980 |
| Grant date | Sep 21, 1982 |
| Priority date | — |
| Expiry date | Oct 9, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/09
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450.degree. and 900.degree. C. and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device (17) may be heated on a graphite element (14) mounted between electrodes (15) in an inert atmosphere in a chamber (11). The process may be enhanced by the application of optical radiation from a Xenon lamp (19).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.