Peter D. Scovell
15Patents
10h-index
6Co-inventors
61Inventor score
Filing activity: Oct 9, 1980 → Jan 26, 1990
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4772571A | Process of self aligned nitridation of TiSi.sub.2 to form TiN/TiSi.sub.2 contact | Emerging Cross-Sectional Technologies | 49 | Expired |
| US4350537A | Semiconductor annealing by pulsed heating | Emerging Cross-Sectional Technologies | 26 | Expired |
| US4745080A | Method of making a self-aligned bipolar transistor with composite masking | Emerging Cross-Sectional Technologies | 22 | Expired |
| US4490183A | Method of reactivating implanted dopants and oxidation semiconductor wafers by microwaves | Electricity | 17 | Expired |
| US4965216A | Method of fabricating a bi-CMOS device | Emerging Cross-Sectional Technologies | 13 | Expired |
| US5055419A | Method of manufacturing a bipolar transistor | Emerging Cross-Sectional Technologies | 12 | Expired |
| US4468308A | Metallic silicide production | Electricity | 12 | Expired |
| US4914048A | Method of making Bicmos devices | Emerging Cross-Sectional Technologies | 12 | Expired |
| US4490182A | Semiconductor processing technique for oxygen doping of silicon | Emerging Cross-Sectional Technologies | 11 | Expired |
| US4755487A | Method for making bipolar transistors using rapid thermal annealing | Emerging Cross-Sectional Technologies | 10 | Expired |
| US4683363A | Microwave apparatus for processing semiconductor | Electricity | 9 | Expired |
| US4563805A | Manufacture of MOSFET with metal silicide contact | Electricity | 9 | Expired |
| US4849364A | Semiconductor devices | Emerging Cross-Sectional Technologies | 3 | Expired |
| US4916517A | Semiconductor devices | Emerging Cross-Sectional Technologies | 2 | Expired |
| US4845532A | Semiconductor devices | Emerging Cross-Sectional Technologies | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.