Method of producing a semiconductor device
US4351674A · kind A · utility
9Cited by
11References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 29, 1980 |
| Grant date | Sep 28, 1982 |
| Priority date | — |
| Expiry date | Aug 29, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A region containing a high concentration of impurity and a desired region adjacent thereto are fused by irradiation with a laser beam, to diffuse the impurity in the lateral direction into the desired region and to render the desired region a low resistance. Since this method can execute only the lateral diffusion of the impurity without affecting other portions, it is very useful for forming a high breakdown voltage MIS-FET, a resistor etc.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.