Makoto Ohkura
43Patents
14h-index
84Co-inventors
84Inventor score
Filing activity: Aug 29, 1980 → May 30, 2012
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4670768A | Complementary MOS integrated circuits having vertical channel FETs | Electricity | 83 | Expired |
| US4609407A | Method of making three dimensional semiconductor devices in selectively laser regrown polysilicon or amorphous silicon layers | Electricity | 66 | Expired |
| US4565584A | Method of producing single crystal film utilizing a two-step heat treatment | Emerging Cross-Sectional Technologies | 58 | Expired |
| US4937641A | Semiconductor memory and method of producing the same | Electricity | 46 | Expired |
| US4599133A | Method of producing single-crystal silicon film | Emerging Cross-Sectional Technologies | 39 | Expired |
| US6943086B2 | Laser annealing apparatus, TFT device and annealing method of the same | Electricity | 36 | Expired |
| US4394191A | Stacked polycrystalline silicon film of high and low conductivity layers | Emerging Cross-Sectional Technologies | 29 | Expired |
| US4498951A | Method of manufacturing single-crystal film | Emerging Cross-Sectional Technologies | 26 | Expired |
| US6452213B1 | SEMICONDUCTOR DEVICE HAVING FIRST, SECOND AND THIRD NON-CRYSTALLINE FILMS SEQUENTIALLY FORMED ON INSULATING BASE WITH SECOND FILM HAVING THERMAL CONDUCTIVITY NOT LOWER THAN THAT OF FIRST FILM AND NOT HIGHER THAN THAT OF THIRD FILM, AND METHOD OF MANUFACTURING THE SAME | Electricity | 20 | Expired |
| US6291847A | Semiconductor integrated circuit device and process for manufacturing the same | Electricity | 20 | Expired |
| US6806099B2 | Process for producing polycrystalline silicon film by crystallizing on amorphous silicon film by light irradiation | Electricity | 16 | Expired |
| US6226079A | Defect assessing apparatus and method, and semiconductor manufacturing method | Physics | 15 | Expired |
| US7129124B2 | Display device, process of fabricating same, and apparatus for fabricating same | Electricity | 15 | Expired |
| US7023500B2 | Display device with active-matrix transistor having silicon film modified by selective laser irradiation | Electricity | 14 | Expired |
| US6570184B2 | Thin film transistor and method for manufacturing the same | Electricity | 13 | Expired |
| US7183148B2 | Display panel and method for manufacturing the same | Electricity | 11 | Expired |
| US6670638B2 | Liquid crystal display element and method of manufacturing the same | Physics | 11 | Expired |
| US6936847B2 | Display device with an improved contact hole arrangement for contacting a semiconductor layer through an insulation film | Physics | 10 | Expired |
| US4984038A | Semiconductor memory and method of producing the same | Electricity | 9 | Expired |
| US4351674A | Method of producing a semiconductor device | Emerging Cross-Sectional Technologies | 9 | Expired |
| US7253864B2 | Active matrix display device with active element including a semiconductor film formed of an aggregate of single crystals each extending in the same direction | Electricity | 9 | Expired |
| US7022183B2 | Semiconductor thin film and process for production thereof | Emerging Cross-Sectional Technologies | 8 | Expired |
| US4570175A | Three-dimensional semiconductor device with thin film monocrystalline member contacting substrate at a plurality of locations | Electricity | 8 | Expired |
| US6624443B2 | Display device with an improved contact hole arrangement for contacting a semiconductor layer through an insulation film | Physics | 8 | Expired |
| US6861299B2 | Process for manufacturing thin film transistor on unannealed glass substrate | Electricity | 8 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.