Plasma etcher having isotropic subchamber with gas outlet for producing uniform etching
US4352974A · kind A · utility
12Cited by
5References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 29, 1980 |
| Grant date | Oct 5, 1982 |
| Priority date | — |
| Expiry date | Jul 29, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32155
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma etcher wherein the provision of a gas outlet directly in an etching chamber is avoided and wherein a subchamber having a sufficient capacity is connected to the etching chamber through a joint part, the gas outlet being provided in this subchamber. With the apparatus, the distribution of etching rates in plasma etching becomes uniform.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.