Surface acoustic wave device using a multi-layer substrate including .alpha..sub.2 O.sub.3, SiO and ZnO
US4354130A · kind A · utility
18Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 5, 1980 |
| Grant date | Oct 12, 1982 |
| Priority date | — |
| Expiry date | Dec 5, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/02574
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
This invention provides a surface acoustic wave device which comprises a multi-layered substrate. The multi-layered substrate comprises at least a piezoelectric zinc oxide layer, an intermediate silicon oxide layer and an .alpha.-Al.sub.2 O.sub.3 base made of a single crystal havine an (0112) crystallographic plane or an equivalent crystallographic plane. This surface acoustic wave device is operable at ultra-high frequency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.