Tsuneo Mitsuyu
22Patents
9h-index
26Co-inventors
75Inventor score
Filing activity: Apr 17, 1979 → Apr 7, 2003
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5492080A | Crystal-growth method and semiconductor device production method using the crystal-growth method | Chemistry; Metallurgy | 60 | Expired |
| US5113473A | Nonlinear, optical thin-films and manufacturing method thereof | Physics | 22 | Expired |
| US4354130A | Surface acoustic wave device using a multi-layer substrate including .alpha..sub.2 O.sub.3, SiO and ZnO | Electricity | 18 | Expired |
| US5079594A | Nonlinear optical thin-film | Performing Operations; Transporting | 17 | Expired |
| US4276535A | Thermistor | Electricity | 16 | Expired |
| US4735910A | In-situ doping of MBE grown II-VI compounds on a homo- or hetero-substrate | Emerging Cross-Sectional Technologies | 14 | Expired |
| US6255201A | Method and device for activating semiconductor impurities | Electricity | 13 | Expired |
| US4731172A | Method for sputtering multi-component thin-film | Electricity | 11 | Expired |
| US4501987A | Surface acoustic wave transducer using a split-finger electrode on a multi-layered substrate | Electricity | 10 | Expired |
| US6577386B2 | Method and apparatus for activating semiconductor impurities | Electricity | 8 | Expired |
| US5817410A | Nonlinear optical composites using linear transparent substances and method for producing the same | Emerging Cross-Sectional Technologies | 7 | Expired |
| US4236095A | Surface acoustic wave device comprising piezoelectric substrate having zinc oxide layer on .alpha.-alumina layer | Electricity | 6 | Expired |
| US5663974A | Semiconductor laser | Electricity | 5 | Expired |
| US4458346A | Pickup stylus | Emerging Cross-Sectional Technologies | 5 | Expired |
| US5464991A | Nonlinear optical materials and their manufacturing method | Physics | 5 | Expired |
| US5341001A | Sulfide-selenide manganese-zinc mixed crystal photo semiconductor and laser diode | Electricity | 5 | Expired |
| US7313080B2 | Information recording medium and its production method, and optical information recording reproducing apparatus | Physics | 5 | Expired |
| US5455431A | Nonlinear optical materials and their manufacturing method | Physics | 3 | Expired |
| US5215929A | Method of manufacturing pn-junction device II-VI compound semiconductor | Electricity | 3 | Expired |
| US5488234A | Semiconductor element having bivalent and VI group element and an insulating layer | Electricity | 2 | Expired |
| US5599609A | Nonlinear optical material and method of producing the same | Emerging Cross-Sectional Technologies | 1 | Expired |
| US5396862A | Method of manufacturing a compound semiconductor | Emerging Cross-Sectional Technologies | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.