Zinc-sulphide capping layer for gallium-arsenide device
US4354198A · kind A · utility
22Cited by
4References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 30, 1980 |
| Grant date | Oct 12, 1982 |
| Priority date | — |
| Expiry date | May 30, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure provides for the use of a group II-VI compound semiconductor as a surface passivator to control recombination of charge carriers at the surface of a group III-V compound semiconductor by a localized heating step. It is theorized for practice of the invention that the control of the recombination of the charge carriers is achieved by chemical reaction of the II-VI compound with excess group V element. In particular the disclosure provides for the use of a capping layer of laser annealed ZnS as a passivating layer on a GaAs device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.