Thomas O. Sedgwick
8Patents
6h-index
12Co-inventors
60Inventor score
Filing activity: Feb 26, 1975 → Jun 2, 1995
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4601779A | Method of producing a thin silicon-on-insulator layer | Electricity | 92 | Expired |
| US5378651A | Comprehensive process for low temperature epitaxial growth | Electricity | 27 | Expired |
| US3971860A | Method for making device for high resolution electron beam fabrication | Emerging Cross-Sectional Technologies | 26 | Expired |
| US4354198A | Zinc-sulphide capping layer for gallium-arsenide device | Electricity | 22 | Expired |
| US5227330A | Comprehensive process for low temperature SI epit axial growth | Electricity | 18 | Expired |
| US4211803A | CVD Growth of magnetic oxide films having growth induced anisotropy | Emerging Cross-Sectional Technologies | 7 | Expired |
| US5487783A | Method and apparatus for preventing rupture and contamination of an ultra-clean APCVD reactor during shutdown | Chemistry; Metallurgy | 5 | Expired |
| US5635242A | Method and apparatus for preventing rupture and contamination of an ultra-clean APCVD reactor during shutdown | Chemistry; Metallurgy | 5 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.