Semiconductor memory device
US4355374A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 1980 |
| Grant date | Oct 19, 1982 |
| Priority date | — |
| Expiry date | Jul 24, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/31
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory comprising a memory cell disposed on a p-type semiconductor substrate and including an insulated-gate field effect transistor and a storage capacitor. The storage capacitor comprises: an insulator capacitor including a first electrode disposed on the substrate, a film of Si.sub.3 N.sub.4 disposed on the first electrode, and a second electrode disposed on the Si.sub.3 N.sub.4 film; and a pn junction capacitor including a first n-type impurity region for constituting either the source or drain of the insulated-gate field effect transistor, and a second p-type impurity region disposed in contact with the first impurity region and having a higher impurity concentration than the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.