Hideo Sunami
43Patents
18h-index
70Co-inventors
84Inventor score
Filing activity: Oct 18, 1972 → Jun 5, 2003
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5106775A | Process for manufacturing vertical dynamic random access memories | Electricity | 405 | Expired |
| US4455495A | Programmable semiconductor integrated circuitry including a programming semiconductor element | Electricity | 111 | Expired |
| US4742018A | Process for producing memory cell having stacked capacitor | Emerging Cross-Sectional Technologies | 109 | Expired |
| US4670768A | Complementary MOS integrated circuits having vertical channel FETs | Electricity | 83 | Expired |
| US4683838A | Plasma treatment system | Electricity | 73 | Expired |
| US4692994A | Process for manufacturing semiconductor devices containing microbridges | Emerging Cross-Sectional Technologies | 48 | Expired |
| US4937641A | Semiconductor memory and method of producing the same | Electricity | 46 | Expired |
| US4918502A | Semiconductor memory having trench capacitor formed with sheath electrode | Electricity | 45 | Expired |
| US6060723A | Controllable conduction device | Electricity | 44 | Expired |
| US4751557A | Dram with FET stacked over capacitor | Electricity | 42 | Expired |
| US4355374A | Semiconductor memory device | Electricity | 37 | Expired |
| US4873560A | Dynamic random access memory having buried word lines | Emerging Cross-Sectional Technologies | 37 | Expired |
| US4656492A | Insulated gate field effect transistor | Electricity | 34 | Expired |
| US6211531A | Controllable conduction device | Electricity | 30 | Expired |
| US4498951A | Method of manufacturing single-crystal film | Emerging Cross-Sectional Technologies | 26 | Expired |
| US4693173A | Clean room | Mechanical Engineering; Lighting; Heating | 25 | Expired |
| US4967247A | Vertical dynamic random access memory | Electricity | 24 | Expired |
| US4210993A | Method for fabricating a field effect transistor | Emerging Cross-Sectional Technologies | 19 | Expired |
| US5357131A | Semiconductor memory with trench capacitor | Electricity | 17 | Expired |
| US5012310A | Semiconductor memory having stacked capacitor | Electricity | 16 | Expired |
| US6169308A | Semiconductor memory device and manufacturing method thereof | Electricity | 14 | Expired |
| US4901128A | Semiconductor memory | Electricity | 13 | Expired |
| US5266815A | Semiconductor integrated circuit device having superconductive layer and isolation member with nitride isolation | Emerging Cross-Sectional Technologies | 13 | Expired |
| US5237528A | Semiconductor memory | Electricity | 13 | Expired |
| US4984030A | Vertical MOSFET DRAM | Electricity | 11 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.