Schottky barrier diode with controlled characteristics and fabrication method
US4357178A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 10, 1980 |
| Grant date | Nov 2, 1982 |
| Priority date | — |
| Expiry date | Nov 10, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28537
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A self-isolated Schottky Barrier diode structure and method of fabrication are disclosed for generating a device having controlled characteristics. An opening is made through an oxide layer over a central region of an n-type semiconductor substrate. The opening has inclined sidewalls over an annular region surrounding the central region of the substrate. An n-type dopant layer is ion implanted through the opening and the surrounding oxide layer. This controls the barrier height for the Schottky Barrier diode. In the region of the substrate surrounding the annular region, where the ion implantation takes place through the full thickness of the oxide, the lifetime of minority carriers is controlled. This has the effect of minimizing PNP parasitic transistor action. A Schottky Barrier contact is formed in the opening through the oxide layer creating a rectifying junction with the semiconductor substrate in the central region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.