David L. Bergeron
18Patents
10h-index
14Co-inventors
69Inventor score
Filing activity: Jun 16, 1977 → May 5, 1999
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6278829A | Optical fiber routing and support apparatus | Physics | 244 | Expired |
| US5578185A | Method for creating gated filament structures for field emision displays | Electricity | 101 | Expired |
| US4201800A | Hardened photoresist master image mask process | Emerging Cross-Sectional Technologies | 69 | Expired |
| US5897414A | Technique for increasing manufacturing yield of matrix-addressable device | Electricity | 29 | Expired |
| US4314267A | Dense high performance JFET compatible with NPN transistor formation and merged BIFET | Electricity | 21 | Expired |
| US4110126A | NPN/PNP Fabrication process with improved alignment | Electricity | 19 | Expired |
| US4357178A | Schottky barrier diode with controlled characteristics and fabrication method | Electricity | 15 | Expired |
| US4412308A | Programmable bipolar structures | Electricity | 13 | Expired |
| US4229753A | Voltage compensation of temperature coefficient of resistance in an integrated circuit resistor | Electricity | 12 | Expired |
| US4390890A | Saturation-limited bipolar transistor device | Electricity | 12 | Expired |
| US4157268A | Localized oxidation enhancement for an integrated injection logic circuit | Emerging Cross-Sectional Technologies | 10 | Expired |
| US4547793A | Trench-defined semiconductor structure | Electricity | 10 | Expired |
| US4344222A | Bipolar compatible electrically alterable read-only memory | Electricity | 8 | Expired |
| US4395812A | Forming an integrated circuit | Electricity | 6 | Expired |
| US4326212A | Structure and process for optimizing the characteristics of I.sup.2 L devices | Electricity | 5 | Expired |
| US5665421A | Method for creating gated filament structures for field emission displays | Electricity | 5 | Expired |
| US4446611A | Method of making a saturation-limited bipolar transistor device | Electricity | 4 | Expired |
| US7025892B1 | Method for creating gated filament structures for field emission displays | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.