Infrared charge transfer device (CTD) system
US4360732A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 1980 |
| Grant date | Nov 23, 1982 |
| Priority date | — |
| Expiry date | Jun 16, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/157
Abstract
An infrared charge transfer device (CTD) imaging system is disclosed which includes an optic system for focusing infrared energy emanating from a scene, a detector matrix for receiving the focused infrared energy and converting it to electrical signals representative of the intensity of the infrared energy, and a video processor for processing the electrical signals into video signals. The detector matrix of the system is a plurality of IR detector cells arranged in rows and columns. Each detector cell includes a substrate of semiconductor material, an integrating electrode, a drain electrode, a transfer electrode and insulating layers. The integrating electrode is centrally disposed with respect to the drain and transfer electrodes with the integrating electrode in a spaced relationship with the drain electrode. The integrating and drain electrodes form first level MIS electrodes on the semiconductor substrate. The transfer gate forms a second level MIS electrode as to the semiconductor substrate and overlaps the space between the integrating and drain electrodes. In a second MIS embodiment the drain electrode is replaced by a diode formed in the semiconductor substrate. In both e…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.