Multilayer photoresist process utilizing an absorbant dye
US4362809A · kind A · utility
77Cited by
6References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 1981 |
| Grant date | Dec 7, 1982 |
| Priority date | — |
| Expiry date | Mar 30, 2001 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved photoetch technique is presented of the portable-conformable-mask type wherein a thin top layer of resist and a thick planarizing layer are deposited on a substrate and the thin layer is exposed and developed to produce a portable-conformable-mask. The improvement involves dissolving a suitable dye in a layer between the thin top layer and the substrate. The dye is preferably selected to absorb light of the wavelengths used to expose the top layer but does not interfere with processing of the other layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.