Formation of multilayer dopant distributions in a semiconductor
US4364778A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 1980 |
| Grant date | Dec 21, 1982 |
| Priority date | — |
| Expiry date | May 30, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making solid state devices having multilayer dopant distributions, including p-p+ and n-n+ junctions, etc. A semiconductor body is rapidly melted, typically by a laser, electron beam, or ion beam. Present in the melt is a first dopant having a low segregation coefficient and a second dopant having a high segregation coefficient. During rapid resolidification of the melt, the first dopant segregates toward the surface, while the second dopant remains substantially in place, producing a junction. The production of diodes, bipolar and field effect transistors, Schottky barriers, ohmic contacts, junction isolated surface regions, high conductivity paths, etc., is possible by this method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.