Semiconductor laser device
US4369513A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 1980 |
| Grant date | Jan 18, 1983 |
| Priority date | — |
| Expiry date | Oct 31, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/1014
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is a semiconductor laser element having on a predetermined semiconductor substrate a stacked region for optical confinement including an active layer and clad layers, a first electrode disposed on the semiconductor substrate side and a second electrode disposed over the stacked region, and means for constructing an optical resonator, the semiconductor laser element comprising the fact that the means to inject current into the active layer is formed of a plurality of stripe conductive regions which are juxtaposed in traveling direction of a laser beam, and that laser radiations emitted in correspondence with the respective stripe conductive regions form a simply connected net and give rise to nonlinear interactions among them. As a typical example of the current injection means, the conductive regions have a strip-shaped pattern which includes a broader portion and a narrower portion. A coupled-multiple-stripe laser element in which the phases and wavelengths of the laser radiations of the respective strips are uniform is realized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.