Electrically insulating substrate and a method of making such a substrate
US4370421A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 5, 1980 |
| Grant date | Jan 25, 1983 |
| Priority date | — |
| Expiry date | Nov 5, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K1/0306
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
From 0.1 to 3.5% by weight of beryllium oxide powder, calculated as beryllium, is added to silicon carbide powder containing up to 0.1% by weight of aluminum, up to 0.1% by weight of boron and up to 0.4% by weight of free carbon, and the mixed powder is pressure-molded. The resulting molded article is heated to a temperature of 1,850.degree. C. to 2,500.degree. C. till there is obtained a sintered body having at least 90% relative density of silicon carbide. Thus, the sintered body having thermal conductivity of at least 0.4 cal/cm.sec..degree. C. at 25.degree. C., electrical resistivity of at least 10.sup.7 Ohm.cm at 25.degree. C. and coefficient of thermal expansion of 3.3.about.4.times.10.sup.-6 /.degree.C. at 25.degree. C. to 300.degree. C. can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.