Metal-semiconductor thermal sensor
US4370640A · kind A · utility
5Cited by
4References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 10, 1980 |
| Grant date | Jan 25, 1983 |
| Priority date | — |
| Expiry date | Sep 10, 2000 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J5/20
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A metal-semiconductor variable resistance temperature or infrared energy measuring device is described, along with a method for making it. The device may be made as a thin film, and typically operates over the range of at least 1 degree K to 300 degrees K. The device typically has an approximately 1/T temperature dependence of resistance. In one embodiment, gold is used as the metal, and germanium the semiconductor. The metal subsists as metallic or intermetallic globules dispersed in a semiconductor matrix, and may be formed by heating a metastable metal-semiconductor alloy until the metal precipitates out as described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.