Robert C. Dynes
11Patents
4h-index
16Co-inventors
57Inventor score
Filing activity: Sep 10, 1980 → Jan 24, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5962863A | Laterally disposed nanostructures of silicon on an insulating substrate | Emerging Cross-Sectional Technologies | 60 | Expired |
| US6103540A | Laterally disposed nanostructures of silicon on an insulating substrate | Emerging Cross-Sectional Technologies | 27 | Expired |
| US4816421A | Method of making a heteroepitaxial structure by mesotaxy induced by buried implantation | Electricity | 21 | Expired |
| US4370640A | Metal-semiconductor thermal sensor | Physics | 5 | Expired |
| US9653309B2 | Method for fabrication of high aspect ratio trenches and formation of nanoscale features therefrom | Electricity | 4 | Active |
| US10224475B2 | Method for fabricating superconducting devices using a focused ion beam | Electricity | 3 | Active |
| US5364836A | Article comprising a superconductor/insulator layer structure, and method of making the article | Emerging Cross-Sectional Technologies | 3 | Expired |
| US10205081B2 | Magnetic flux-to-voltage transducer based on josephson junction arrays | Electricity | 1 | Active |
| US10818833B2 | Magnetic flux-to-voltage transducer based on Josephson junction arrays | Electricity | 0 | Active |
| US11063201B2 | Method for fabricating superconducting devices using a focused ion beam | Electricity | 0 | Active |
| US10896803B2 | Ion beam mill etch depth monitoring with nanometer-scale resolution | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.