Low temperature process for depositing oxide layers by photochemical vapor deposition
US4371587A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 26, 1981 |
| Grant date | Feb 1, 1983 |
| Priority date | — |
| Expiry date | Mar 26, 2001 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31678
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The specification discloses a low temperature process for depositing oxide layers on a substrate by photochemical vapor deposition, by exposing the substrate to a selected vapor phase reactant in the presence of photochemically generated neutral (un-ionized) oxygen atoms. The oxygen atoms react with the vapor phase reactant to form the desired oxide, which deposits as a layer on the substrate. The use of photochemically generated neutral oxygen atoms avoids damage to the substrate due to charge bombardment or radiation bombardment of the substrate. The deposited oxide layer may optionally incorporate a selected dopant material in order to modify the physical, electrical, or optical characteristics of the oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.