Process for forming contact openings through oxide layers
US4372034A · kind A · utility
50Cited by
4References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 26, 1981 |
| Grant date | Feb 8, 1983 |
| Priority date | — |
| Expiry date | Mar 26, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76804
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process is described for forming an opening for a contact member through a deposited oxide layer and thermally grown oxide layer. Where the deposited oxide layer is rich in phosphorus, a wet etchant is used to etch through the deposited oxide layer. This results in a tapered opening through the deposited oxide layer. Then a plasma etchant is used to form an opening through the thermally grown oxide in alignment with an opening through a photoresist layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.